Dynamic RAM

Dynamic RAM: Technology Advancements

provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges.

Topics Include:

• DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors
• Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations
• How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research
• Various types of leakages and power consumption reduction methods in active and sleep mode
• Various types of SAs and yield enhancement techniques employing ECC and redundancy

A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.