Nanostructured silicon-germanium (SiGe)

Opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.

Part one: Structural properties

The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys.

Part two: Formation of SiGe nanostructures

Concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling.

Part three: Material properties

Covers the material properties of SiGe nanostructures, including chapters on topics such as strain-induced defects, transport properties, and microcavities and quantum cascade laser structures.

Part four: Devices utilizing SiGe alloys

Discusses applications in ultra large scale integrated systems, MOSFETs, and the use of SiGe in different types of transistors and optical devices.

With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.

Highlights

- Reviews the materials science of nanostructures and their properties and applications in different electronic devices

- Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys

- Explores the formation of SiGe nanostructures featuring different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition