Overview

This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them.

Key Topics

In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling.

Intended Audience

It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of the approaches used and the links with modeling techniques for either higher or lower levels.